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2SK1104O PDF预览

2SK1104O

更新时间: 2024-11-25 23:20:35
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
3页 44K
描述
TRANSISTOR | JFET | N-CHANNEL | 200UA I(DSS) | TO-251VAR

2SK1104O 数据手册

 浏览型号2SK1104O的Datasheet PDF文件第2页浏览型号2SK1104O的Datasheet PDF文件第3页 
Silicon Junction FETs (Small Signal)  
2SK1104  
Silicon N-Channel Junction FET  
For switching  
unit: mm  
4.0±0.2  
Complementary to 2SJ164  
Features  
Low ON-resistance  
Low-noise characteristics  
Absolute Maximum Ratings (Ta = 25°C)  
marking  
Parameter  
Gate to Drain voltage  
Drain current  
Symbol  
VGDS  
ID  
Ratings  
Unit  
V
1
2
3
65  
20  
10  
mA  
mA  
mW  
°C  
Gate current  
IG  
1.27 1.27  
1: Source  
2: Gate  
2.54±0.15  
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
300  
3: Drain  
EIAJ: SC-72  
New S Type Package  
Tch  
150  
Tstg  
55 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
6
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Drain voltage  
IDSS  
VDS = 10V, VGS = 0  
0.2  
IGSS  
VGS = 30V, VDS = 0  
10  
VGDS  
VGSC  
| Yfs |  
RDS(on)  
IG = 10µA, VDS = 0  
65  
Gate to Source cut-off voltage  
Forward transfer admittance  
Drain to Source ON-resistance  
VDS = 10V, ID = 10µA  
VDS = 10V, ID = 1mA, f = 1kHz  
VDS = 10mV, VGS = 0  
1.5  
2.5  
250  
7
3.5  
V
1.8  
mS  
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
pF  
pF  
pF  
VDS = 10V, VGS = 0, f = 1MHz  
1.3  
1.5  
* IDSS rank classification  
Runk  
O
P
Q
R
IDSS (mA)  
0.2 to 1  
0.6 to 1.5  
1 to 3  
2.5 to 6  
1

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