Datasheet > 2SK1109J34

2SK1109J34

更新时间： 2024-11-28 14:39:27

品牌	Logo	应用领域
日电电子 - NEC		光电二极管晶体管
页数	文件大小	规格书
8页	45K
描述
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, SC-59, 3 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SK1109J34 技术参数

生命周期：	Obsolete	零件包装代码：	SC-59
包装说明：	FLATPACK, R-PDFP-F3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.26
Is Samacsys：	N	配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR
最大漏极电流 (ID)：	0.01 A	FET 技术：	JUNCTION
JESD-30 代码：	R-PDFP-F3	元件数量：	1
端子数量：	3	工作模式：	DEPLETION MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLATPACK	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK1109J34 数据手册

DATA SHEET

JUNCTION FIELD EFFECT TRANSISTOR

2SK1109

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SK1109 is suitable for converter of ECM.

0.8

FEATURES

• Compact package

1. Source

2. Drain

3. Gate

• High forward transfer admittance

1000 µS TYP. (I^DSS= 100 µA)

1600 µS TYP. (I^DSS= 200 µA)

• Includes diode and high resistance at G - S

ORDERING INFORMATION

PART NUMBER

2SK1109

PACKAGE

SC-59 (MM)

2.9 ± 0.2

1.1

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage ^Note

V^DSX

–20

EQUIVALENT CIRCUIT

Gate to Drain Voltage

Drain Current

V^GDO

I^D

°C

Drain

Gate Current

I^G

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

T^j

Gate

125

T^stg

–55 to +125 °C

Source

Note V^GS= –1.0 V

Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15940EJ1V0DS00 (1st edition)

Date Published January 2002 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7 8

中文翻译

下载PDF

与2SK1109J34相关器件

型号	品牌	获取价格	描述	数据表
2SK1109J35	NEC	获取价格	Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction
2SK1109J36	RENESAS	获取价格	暂无描述
2SK1109J37	RENESAS	获取价格	10mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, SC-59, 3 PIN
2SK1109-L	RENESAS	获取价格	2SK1109-L
2SK1109-L-AT	RENESAS	获取价格	TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,40A I(DSS),SC-59
2SK1109-T1B	RENESAS	获取价格	2SK1109-T1B
2SK1109-T1B-AT	RENESAS	获取价格	TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,40A I(DSS),SC-59
2SK1109-T2B	RENESAS	获取价格	2SK1109-T2B
2SK1109-T2B-A	RENESAS	获取价格	TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,40A I(DSS),SC-59
2SK1112	TOSHIBA	获取价格	TRANSISTOR 5 A, 60 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power