Datasheet > 2SK1103P

2SK1103P

更新时间： 2024-11-25 23:20:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	44K
描述
TRANSISTOR \| JFET \| N-CHANNEL \| 600UA I(DSS) \| TO-236

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中文翻译

获取价格

数据手册

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2SK1103P 数据手册

Silicon Junction FETs (Small Signal)

2SK1103

Silicon N-Channel Junction FET

For switching

unit: mm

2.8 –⁺0⁰.^.3²

1.5 –⁺0⁰.^.0²5⁵

Complementary to 2SJ163

0.65±0.15

■ Features

● Low ON-resistance

● Low-noise characteristics

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Gate to Drain voltage

Drain current

Symbol

V_GDS

I_D

Ratings

Unit

−65

°C

0.1 to 0.3

0.4±0.2

Gate current

I_G

Allowable power dissipation

Channel temperature

Storage temperature

P_D

150

1: Source

2: Drain

3: Gate

JEDEC: TO-236

EIAJ: SC-59

Mini Type Package (3-pin)

T_ch

150

T_stg

−55 to +150

°C

Marking Symbol (Example): 4L

■ Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain to Source cut-off current

Gate to Source leakage current

Gate to Drain voltage

I_DSS

V_DS= 10V, V_GS= 0

0.2

I_GSS

V_GS= −30V, V_DS= 0

−10

V_GDS

V_GSC

| Y_fs|

R_DS(on)

I_G= −10µA, V_DS= 0

−65

Gate to Source cut-off voltage

Forward transfer admittance

Drain to Source ON-resistance

V_DS= 10V, I_D= 10µA

V_DS= 10V, I_D= 1mA, f = 1kHz

V_DS= 10mV, V_GS= 0

−1.5

2.5

300

−3.5

1.8

Ω

Input capacitance (Common Source) C_iss

V_DS= 10V, V_GS= 0, f = 1MHz

Reverse transfer capacitance (Common Source) C_rss

1.5

^*I_DSSrank classification

Runk

I_DSS(mA)

0.2 to 1

4LO

0.6 to 1.5

4LP

1 to 3

4LQ

2.5 to 6

4LR

Marking Symbol

12 3

中文翻译

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