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2SK1103 PDF预览

2SK1103

更新时间: 2024-11-25 22:45:07
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
2页 34K
描述
Silicon N-Channel Junction FET

2SK1103 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.82Is Samacsys:N
配置:SINGLE最小漏源击穿电压:65 V
最大漏极电流 (ID):0.02 AFET 技术:JUNCTION
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK1103 数据手册

 浏览型号2SK1103的Datasheet PDF文件第2页 
Silicon Junction FETs (Small Signal)  
2SK1103  
Silicon N-Channel Junction FET  
For switching  
unit: mm  
2.8 +00..32  
1.5 +00..0255  
Complementary to 2SJ163  
0.65±0.15  
0.65±0.15  
Features  
Low ON-resistance  
Low-noise characteristics  
1
2
3
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Gate to Drain voltage  
Drain current  
Symbol  
VGDS  
ID  
Ratings  
Unit  
V
65  
20  
10  
mA  
mA  
mW  
°C  
0.1 to 0.3  
0.4±0.2  
Gate current  
IG  
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
150  
1: Source  
2: Drain  
3: Gate  
JEDEC: TO-236  
EIAJ: SC-59  
Mini Type Package (3-pin)  
Tch  
150  
Tstg  
55 to +150  
°C  
Marking Symbol (Example): 4L  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
6
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Drain voltage  
IDSS  
VDS = 10V, VGS = 0  
0.2  
IGSS  
VGS = 30V, VDS = 0  
10  
VGDS  
VGSC  
| Yfs |  
RDS(on)  
IG = 10µA, VDS = 0  
65  
Gate to Source cut-off voltage  
Forward transfer admittance  
Drain to Source ON-resistance  
VDS = 10V, ID = 10µA  
VDS = 10V, ID = 1mA, f = 1kHz  
VDS = 10mV, VGS = 0  
1.5  
2.5  
300  
7
3.5  
V
1.8  
mS  
Input capacitance (Common Source) Ciss  
pF  
pF  
VDS = 10V, VGS = 0, f = 1MHz  
Reverse transfer capacitance (Common Source) Crss  
1.5  
* IDSS rank classification  
Runk  
O
P
Q
R
IDSS (mA)  
0.2 to 1  
4LO  
0.6 to 1.5  
4LP  
1 to 3  
4LQ  
2.5 to 6  
4LR  
Marking Symbol  
1

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