是否Rohs认证: | 不符合 | 生命周期: | Not Recommended |
零件包装代码: | TO-220 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.16 | Is Samacsys: | N |
雪崩能效等级(Eas): | 160 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 83 A | 最大漏极电流 (ID): | 83 A |
最大漏源导通电阻: | 0.023 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 120 W |
最大脉冲漏极电流 (IDM): | 300 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ606-Z-AZ | NEC |
获取价格 |
暂无描述 | |
2SJ606-Z-E1-AZ | RENESAS |
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Pch Single Power Mosfet -60V -83A 15Mohm Mp-25Z/To-220Smd, MP-25Z, /Embossed Tape | |
2SJ606-Z-E2-AZ | RENESAS |
获取价格 |
Pch Single Power Mosfet -60V -83A 15Mohm Mp-25/To-220Ab, MP-25, /Embossed Tape | |
2SJ606-ZJ | NEC |
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MOS FIELD EFFECT TRANSISTOR | |
2SJ606-ZJ | RENESAS |
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83A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN | |
2SJ606-ZJ | KEXIN |
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P-Channel MOSFET | |
2SJ606-ZJ-AZ | NEC |
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暂无描述 | |
2SJ606-ZJ-AZ | RENESAS |
获取价格 |
83A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN | |
2SJ606-ZJ-E1-AZ | RENESAS |
获取价格 |
2SJ606-ZJ-E1-AZ | |
2SJ606-ZJ-E2-AZ | RENESAS |
获取价格 |
2SJ606-ZJ-E2-AZ |