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2SJ606-ZJ PDF预览

2SJ606-ZJ

更新时间: 2024-11-22 18:09:27
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 1511K
描述
P-Channel MOSFET

2SJ606-ZJ 数据手册

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SMD Type  
MOSFET  
P-Channel MOSFET  
2SJ606-ZJ  
Features  
VDS (V) =-60V  
ID =-83A  
RDS(ON) 15mΩ (VGS =-10V)  
RDS(ON) 23mΩ (VGS =-4V)  
Low Ciss: Ciss = 4800 pF (TYP.)  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
-60  
Unit  
V
V
DS  
GS  
Gate-Source Voltage  
V
±20  
-83  
Continuous Drain Current  
Pulsed Drain Current (Note.1)  
Single Avalanche Current (Note.2)  
ID  
A
I
DM  
AS  
-300  
-40  
I
120  
Tc = 25℃  
Ta = 25℃  
Power Dissipation  
P
D
W
mJ  
1.5  
Single Avalanche Energy  
Junction Temperature  
(Note.2)  
E
AS  
160  
T
J
150  
Junction Storage Temperature Range  
T
stg  
-55 to 150  
Note.1: PW 10us,Duty Cycle 1%  
Note.2: Starting TJ = 25 °C,VDD=-30V, RG = 25Ω , VGS = –20 V 0  
1
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