生命周期: | Transferred | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.28 |
雪崩能效等级(Eas): | 203 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 65 A | 最大漏源导通电阻: | 0.031 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 200 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ605-ZJ-E2-AZ | RENESAS |
获取价格 |
2SJ605-ZJ-E2-AZ | |
2SJ606 | KEXIN |
获取价格 |
MOS Field Effect Transistor | |
2SJ606 | RENESAS |
获取价格 |
83A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN | |
2SJ606 | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
2SJ606(0)-Z-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,83A I(D),TO-263ABVAR | |
2SJ606(0)-Z-E1-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,83A I(D),TO-263ABVAR | |
2SJ606(0)-ZJ-AZ | RENESAS |
获取价格 |
2SJ606(0)-ZJ-AZ | |
2SJ606(0)-ZJ-E1-AZ | RENESAS |
获取价格 |
2SJ606(0)-ZJ-E1-AZ | |
2SJ606(0)-ZJ-E2-AZ | RENESAS |
获取价格 |
2SJ606(0)-ZJ-E2-AZ | |
2SJ606-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 83A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Met |