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2SJ605-ZJ-AZ PDF预览

2SJ605-ZJ-AZ

更新时间: 2024-10-30 21:15:59
品牌 Logo 应用领域
日电电子 - NEC 开关脉冲晶体管
页数 文件大小 规格书
8页 84K
描述
Power Field-Effect Transistor, 65A I(D), 60V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, TO-263, 3 PIN

2SJ605-ZJ-AZ 技术参数

生命周期:Transferred零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.28
雪崩能效等级(Eas):203 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):65 A最大漏源导通电阻:0.031 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ605-ZJ-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ605  
SWITCHING  
P-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
The 2SJ605 is P-channel MOS Field Effect Transistor designed  
for high current switching applications.  
ORDERING INFORMATION  
PART NUMBER  
2SJ605  
PACKAGE  
TO-220AB  
TO-262  
2SJ605-S  
FEATURES  
2SJ605-ZJ  
TO-263  
Super low on-state resistance:  
RDS(on)1 = 20 mMAX. (VGS = –10 V, ID = –33 A)  
RDS(on)2 = 31 mMAX. (VGS = –4.0 V, ID = –33 A)  
Low input capacitance  
2SJ605-Z  
TO-220SMDNote  
Note TO-220SMD package is produced only  
in Japan.  
!
Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A)  
Built-in gate protection diode  
(TO-220AB)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
–60  
m 20  
m 65  
m 200  
100  
V
V
A
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
(TO-262)  
W
PT  
1.5  
Tch  
150  
°C  
Storage Temperature  
Tstg  
–55 to +150 °C  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
–45  
203  
A
EAS  
mJ  
Notes 1. PW 10 µs, Duty cycle 1%  
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 , VGS = –20 0 V  
!
(TO-263, TO-220SMD)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14650EJ2V0DS00 (2nd edition)  
Date Published May 2001 NS CP(K)  
Printed in Japan  
The mark ! shows major revised points.  
2000  
©

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