是否Rohs认证: | 不符合 | 生命周期: | Not Recommended |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.16 | Is Samacsys: | N |
雪崩能效等级(Eas): | 160 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 83 A | 最大漏极电流 (ID): | 83 A |
最大漏源导通电阻: | 0.023 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 120 W | 最大脉冲漏极电流 (IDM): | 300 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ606(0)-Z-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,83A I(D),TO-263ABVAR | |
2SJ606(0)-Z-E1-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,83A I(D),TO-263ABVAR | |
2SJ606(0)-ZJ-AZ | RENESAS |
获取价格 |
2SJ606(0)-ZJ-AZ | |
2SJ606(0)-ZJ-E1-AZ | RENESAS |
获取价格 |
2SJ606(0)-ZJ-E1-AZ | |
2SJ606(0)-ZJ-E2-AZ | RENESAS |
获取价格 |
2SJ606(0)-ZJ-E2-AZ | |
2SJ606-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 83A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Met | |
2SJ606-S | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
2SJ606-S | RENESAS |
获取价格 |
83A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN | |
2SJ606-S-AZ | NEC |
获取价格 |
暂无描述 | |
2SJ606-Z | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR |