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2SJ606-S-AZ PDF预览

2SJ606-S-AZ

更新时间: 2024-11-20 13:04:27
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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ606  
SWITCHING  
P-CHANNEL POWER MOS FET  
ORDERING INFORMATION  
DESCRIPTION  
The 2SJ606 is P-channel MOS Field Effect Transistor designed  
for high current switching applications.  
PART NUMBER  
2SJ606  
PACKAGE  
TO-220AB  
TO-262  
2SJ606-S  
FEATURES  
2SJ606-ZJ  
TO-263  
Super low on-state resistance:  
RDS(on)1 = 15 mMAX. (VGS = 10 V, ID = 42 A)  
RDS(on)2 = 23 mMAX. (VGS = 4.0 V, ID = 42 A)  
Low input capacitance:  
Note  
TO-220SMD  
2SJ606-Z  
Note TO-220SMD package is produced only in  
Japan  
Ciss = 4800 pF TYP. (VDS = 10 V, VGS = 0 V)  
Built-in gate protection diode  
(TO-220AB)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
60  
V
V
20  
83  
m
m
A
300  
A
m
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
120  
W
PT  
1.5  
150  
W
(TO-262)  
Tch  
°C  
°C  
A
Storage Temperature  
Single Avalanche Current Note2  
Tstg  
55 to +150  
40  
IAS  
Single Avalanche Energy Note2  
EAS  
160  
mJ  
Notes 1. PW 10 µs, Duty cycle 1%  
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V  
(TO-263, TO-220SMD)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published July 2002 NS CP(K)  
Printed in Japan  
D14654EJ3V0DS00 (3rd edition)  
The mark shows major revised points.  
2000, 2001  
©

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