5秒后页面跳转
2SJ606 PDF预览

2SJ606

更新时间: 2024-11-17 22:21:47
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 80K
描述
MOS FIELD EFFECT TRANSISTOR

2SJ606 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.14Is Samacsys:N
雪崩能效等级(Eas):160 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):83 A最大漏源导通电阻:0.023 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):300 A认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ606 数据手册

 浏览型号2SJ606的Datasheet PDF文件第2页浏览型号2SJ606的Datasheet PDF文件第3页浏览型号2SJ606的Datasheet PDF文件第4页浏览型号2SJ606的Datasheet PDF文件第5页浏览型号2SJ606的Datasheet PDF文件第6页浏览型号2SJ606的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ606  
SWITCHING  
P-CHANNEL POWER MOS FET  
ORDERING INFORMATION  
DESCRIPTION  
The 2SJ606 is P-channel MOS Field Effect Transistor designed  
for high current switching applications.  
PART NUMBER  
2SJ606  
PACKAGE  
TO-220AB  
TO-262  
2SJ606-S  
FEATURES  
2SJ606-ZJ  
TO-263  
Super low on-state resistance:  
RDS(on)1 = 15 mMAX. (VGS = 10 V, ID = 42 A)  
RDS(on)2 = 23 mMAX. (VGS = 4.0 V, ID = 42 A)  
Low input capacitance:  
Note  
TO-220SMD  
2SJ606-Z  
Note TO-220SMD package is produced only in  
Japan  
Ciss = 4800 pF TYP. (VDS = 10 V, VGS = 0 V)  
Built-in gate protection diode  
(TO-220AB)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
60  
V
V
20  
83  
m
m
A
300  
A
m
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
120  
W
PT  
1.5  
150  
W
(TO-262)  
Tch  
°C  
°C  
A
Storage Temperature  
Single Avalanche Current Note2  
Tstg  
55 to +150  
40  
IAS  
Single Avalanche Energy Note2  
EAS  
160  
mJ  
Notes 1. PW 10 µs, Duty cycle 1%  
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V  
(TO-263, TO-220SMD)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published July 2002 NS CP(K)  
Printed in Japan  
D14654EJ3V0DS00 (3rd edition)  
The mark shows major revised points.  
2000, 2001  
©

与2SJ606相关器件

型号 品牌 获取价格 描述 数据表
2SJ606(0)-Z-AZ RENESAS

获取价格

TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,83A I(D),TO-263ABVAR
2SJ606(0)-Z-E1-AZ RENESAS

获取价格

TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,83A I(D),TO-263ABVAR
2SJ606(0)-ZJ-AZ RENESAS

获取价格

2SJ606(0)-ZJ-AZ
2SJ606(0)-ZJ-E1-AZ RENESAS

获取价格

2SJ606(0)-ZJ-E1-AZ
2SJ606(0)-ZJ-E2-AZ RENESAS

获取价格

2SJ606(0)-ZJ-E2-AZ
2SJ606-AZ NEC

获取价格

Power Field-Effect Transistor, 83A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Met
2SJ606-S NEC

获取价格

MOS FIELD EFFECT TRANSISTOR
2SJ606-S RENESAS

获取价格

83A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN
2SJ606-S-AZ NEC

获取价格

暂无描述
2SJ606-Z NEC

获取价格

MOS FIELD EFFECT TRANSISTOR