Datasheet > 2SJ606

2SJ606

更新时间： 2024-10-30 06:23:59

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
2页	50K
描述
MOS Field Effect Transistor

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中文翻译

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数据手册

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2SJ606 数据手册

SMD Type

MOSFET

MOS Field Effect Transistor

2SJ606

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Low on-resistance

RDS(on)1 =15 m MAX. (VGS =-10 V, ID = -42A)

RDS(on)2 = 23m MAX. (VGS = -4.0 V, ID =-42 A)

Low Ciss: Ciss = 4800 pF TYP.

+0.1

-0.1

0.1max

1.27

Built-in gate protection diode

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current (DC)

Symbol

VDSS

VGSS

Rating

-60

Unit

Drain current(pulse) *

300

120

1.5

Power dissipation

TC=25

TA=25

Channel temperature

Storage temperature

Tch

150

Tstg

-55 to +150

* PW 10 s, duty cycle

1 %

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与2SJ606相关器件

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2SJ606(0)-Z-E1-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,83A I(D),TO-263ABVAR
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2SJ606(0)-ZJ-E1-AZ	RENESAS	获取价格	2SJ606(0)-ZJ-E1-AZ
2SJ606(0)-ZJ-E2-AZ	RENESAS	获取价格	2SJ606(0)-ZJ-E2-AZ
2SJ606-AZ	NEC	获取价格	Power Field-Effect Transistor, 83A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Met
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2SJ606-S	RENESAS	获取价格	83A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN
2SJ606-S-AZ	NEC	获取价格	暂无描述
2SJ606-Z	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR