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2SJ598-Z PDF预览

2SJ598-Z

更新时间: 2024-11-17 21:55:15
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
8页 154K
描述
SWITCHING P-CHANNEL POWER MOS FET

2SJ598-Z 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ598  
SWITCHING  
P-CHANNEL POWER MOS FET  
ORDERING INFORMATION  
DESCRIPTION  
The 2SJ598 is P-channel MOS Field Effect Transistor designed  
PART NUMBER  
PACKAGE  
for solenoid, motor and lamp driver.  
2SJ598  
TO-251 (MP-3)  
TO-252 (MP-3Z)  
2SJ598-Z  
FEATURES  
Low on-state resistance:  
RDS(on)1 = 130 mMAX. (VGS = –10 V, ID = –6 A)  
RDS(on)2 = 190 mMAX. (VGS = –4.0 V, ID = –6 A)  
Low Ciss: Ciss = 720 pF TYP.  
Built-in gate protection diode  
TO-251/TO-252 package  
(TO-251)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
PT  
Tch  
Tstg  
IAS  
–60  
m20  
m12  
m30  
23  
V
V
A
A
W
W
°C  
°C  
A
1.0  
150  
(TO-252)  
Storage Temperature  
–55 to +150  
–12  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
EAS  
14.4  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 , VGS = –20 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D14656EJ4V0DS00 (4th edition)  
Date Published August 2004 NS CP(K)  
Printed in Japan  
The mark  
shows major revised points.  
2000, 2001  

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