生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 4 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ598 | NEC |
获取价格 |
SWITCHING P-CHANNEL POWER MOS FET | |
2SJ598 | KEXIN |
获取价格 |
MOS Field Effect Transistor | |
2SJ598-AZ | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal- | |
2SJ598-Z | NEC |
获取价格 |
SWITCHING P-CHANNEL POWER MOS FET | |
2SJ598-Z-AZ | NEC |
获取价格 |
暂无描述 | |
2SJ598-ZK | RENESAS |
获取价格 |
Pch Single Power Mosfet -60V -12A 130Mohm Mp-3Zk/To-252 | |
2SJ599 | NEC |
获取价格 |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SJ599 | KEXIN |
获取价格 |
MOS Field Effect Transistor | |
2SJ599 | RENESAS |
获取价格 |
20000mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251, TO-251, MP-3, 3 PIN | |
2SJ599(0)-Z-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,20A I(D),TO-252AA |