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2SJ598 PDF预览

2SJ598

更新时间: 2024-10-14 06:23:51
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关
页数 文件大小 规格书
2页 49K
描述
MOS Field Effect Transistor

2SJ598 数据手册

 浏览型号2SJ598的Datasheet PDF文件第2页 
SMD Type  
MOSFET  
MOS Field Effect Transistor  
2SJ598  
Features  
TO-252  
Unit: mm  
Low on-resistance  
+0.15  
-0.15  
+0.1  
2.30  
-0.1  
6.50  
+0.2  
5.30  
-0.2  
+0.8  
0.50  
-0.7  
RDS(on)1 = 130 m MAX. (VGS =-10 V, ID = -6 A)  
RDS(on)2 = 190 m MAX. (VGS = -4.0 V, ID =-6 A)  
Low Ciss: Ciss = 720 pF TYP.  
Built-in gate protection diode  
0.127  
max  
+0.1  
0.80  
-0.1  
1 Gate  
+0.1  
0.60  
-0.1  
2.3  
4.60  
2 Drain  
3 Source  
+0.15  
-0.15  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Gate to source voltage  
Drain current (DC)  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
-60  
V
20  
A
12  
30  
Drain current(pulse) *  
Power dissipation  
ID  
A
PD  
23  
W
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s, duty cycle  
1 %  
1
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