是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SFM | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 16 A | 最大漏极电流 (ID): | 16 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 64 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ302-Z-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal |
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2SJ303 | NEC |
获取价格 |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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2SJ303-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal |
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2SJ304 | TOSHIBA |
获取价格 |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND M |
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2SJ304_07 | TOSHIBA |
获取价格 |
DC−DC Converter, Relay Drive and Motor Drive Applications |
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2SJ304_09 | TOSHIBA |
获取价格 |
DC−DC Converter, Relay Drive and Motor Drive Applications |
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2SJ305 | TOSHIBA |
获取价格 |
P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG APPLICATIONS) |
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2SJ305 | TYSEMI |
获取价格 |
HIGH SPEED SWITCHING APPLICATIONS ANALOG APPLICATIONS |
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2SJ305(T5LCK,F) | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor |
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2SJ305(T5LPIC,F) | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal |
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