2SJ304
2
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSIV)
2SJ304
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
z High forward transfer admittance
: R
= 80 mΩ (typ.)
DS (ON)
: |Y | = 8.0 S (typ.)
fs
z Low leakage current : I
= −100 μA (max) (V
= −60 V)
DSS
DS
z Enhancement mode : V = −0.8~−2.0 V (V
= −10 V, I = −1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Symbol
Rating
Unit
V
−60
−60
V
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
±20
−14
GSS
DC (Note 1)
Pulse(Note 1)
I
JEDEC
JEITA
―
D
Drain current
A
I
−56
DP
SC-67
Drain power dissipation (Tc = 25°C)
Channel temperature
P
40
W
°C
°C
D
ch
stg
TOSHIBA
2-10R1B
T
150
Weight: 1.9 g (typ.)
Storage temperature range
T
−55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
3.125
62.5
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
Thermal resistance, channel to
ambient
R
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2006-11-16