Datasheet > 2SJ305(T5LCK,F)

2SJ305(T5LCK,F)

更新时间： 2024-01-21 22:45:04

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	322K
描述
Small Signal Field-Effect Transistor

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技术参数
数据手册

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2SJ305(T5LCK,F) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

2SJ305(T5LCK,F) 数据手册

2SJ305

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ305

High Speed Switching Applications

Analog Applications

Unit: mm

•

High input impedance

Low gate threshold voltage.: V = −0.5 to −1.5 V

Excellent switching times.: t = 0.06 μs (typ.)

off

= 0.15 μs (typ.)

•

Low drain-source ON resistance: R

= 2.4 Ω (typ.)

DS (ON)

Small package.

Complementary to 2SK2009

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±20

Gate-source voltage

DC drain current

GSS

JEDEC

JEITA

TO-236MOD

−200

°C

SC-59

Drain power dissipation

Channel temperature

Storage temperature range

200

stg

TOSHIBA

2-3F1F

150

Weight: 0.012 g (typ.)

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: This transistor is electrostatic sensitive device.

Please handle with caution.

Marking

Equivalent Circuit

Start of commercial production

1992-04

2014-03-01

12 3 4 5

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