Datasheet > 2SEPC820MY+TSS

2SEPC820MY+TSS

更新时间： 2024-11-22 11:01:47

品牌	Logo	应用领域
松下 - PANASONIC		PC
页数	文件大小	规格书
2页	75K
描述
SEPC

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SEPC820MY+TSS 数据手册

Update

OS-CON

Line-up

RoHS directive/Halogen-free compliant

Super Low ESR（5mΩ～ 24mΩ）

Large capacitance（2,700μF）

Endurance：105℃ 5,000h

Radial lead

type

SEPCSeries

Guidelines and

precautions

Series system

diagram

Image of

case size

Products list

Specifications

Items

Rated voltage

Surge voltage

Packing

speciﬁcations

（SMD type）

Condition

Speciﬁcations

Packing

speciﬁcations

（Radial lead type）

(V)

－

Room temperature

－

2.5

3.3

4.0

5.2

6.3

Recommended

soldering

8.2

condition

Fundamental

structure

Category temperature range(℃)

－55 to ＋105

M : ±20

Capacitance tolerance

Dissipation Factor (DF)

Leakage current^※1

(％)

120Hz/20℃

Characteristics

120Hz/20℃

Please see the attached characteristics list

0.75 to 1.25

Reliability

Rated voltage applied, after 2 minutes

100kHz to 300kHz/20℃

SXV

SVPG

SVPF

SVPE

SVPS

SVPD

SVPC

SVPB

SVPA

SVQP

SVP

Equivalent series resistance (ESR)

Characteristics of impedance

－55℃ Z/Z20℃

Based the value at

100kHz, ＋20℃

ratio at high temp.

＋105℃ Z/Z20℃

0.75 to 1.25

and low temp.

△C/C

Within ±20% of the initial value

Within 1.5 times of the initial limit

Within the initial limit

105℃, 5,000h,

Rated voltage applied

Endurance

ESR

△C/C

Within ±20% of the initial value

Within 1.5 times of the initial limit

60℃, 90 to 95%RH,

1,000h,

Damp heat(Steady state)

No-applied voltage

ESR

Within the initial limit (after voltage processing)

Within ±5% of the initial value

△C/C

SXE

SEPF

SEPC

SEQP

SEP

Within the initial limit

Flow method

Resistance to soldering heat^※2

(260±5℃ X 10s)

ESR

Within the initial limit

Within the initial limit (after voltage processing)

※1 In case of some problems for measured values, measure after applying rated voltage for 120 minutes at 105℃.

※2 Please refer to page 25 for ﬂow soldering conditions.

Catalog Deletion and

EOL series

Marking and dimensions

E12, E13, F13 Size

φd

(unit : mm)

Polarity marking

（Cathode）

（＋）

Case No.

Series

Size

φD ^±0.5

φd ^±0.05

L max

POSCAP

Line-up

code

003

SEPC

±0.5

C55

E12

E13

F13

5.0

6.3

8.0

10.0

9.0

5.5

6.0

7.0

9.0

7.0

9.0

12.0

13.0

2.0

0.6

Guidelines and

precautions

B9 size has

2700

(

)

no marking

±0.5

2.5

3.5

5.0

0.45

0.45^※3

0.6

15min.

4min.

2.5

Rated capacitance

19min.

Rated voltage

B9, C55, C6, C7, C9, E7, E9 Size

φd

0.6

Selection guide

Technical data

0.6 ^※4

0.6

（＋）

0.6

15min.

4min.

19min.

※3 2SEPC390M,2SEPC560M : 0.5^±0.05

※4 16SEPC150MD,10SEPC270MD : 0.45^±0.05

B9,C55,C6,C7,C9,E7,E9 size ﬂat rubber is used.

Size list

RV : Rated voltage

2.5

4.0

6.3

μF

100

150

180

220

270

330

390

470

560

680

820

C6，C9

E9, E12

C55

Surface mount type

E9, E12

B9, C9

C7,C9, E9, E13

F13

B9, C6,C9, E9 C9, E9, E13 C9, E9

E13

F13

C9,E7, E9, E13

1,000

1,500

2,700

F13

Catalog Deletion and

EOL models

F13

中文翻译

下载PDF

与2SEPC820MY+TSS相关器件

型号	品牌	获取价格	描述	数据表
2SF292200CYY	SILAN	获取价格	ULTRAFAST RECOVERY DIODE CHIPS
2SF292200HYY	SILAN	获取价格	FAST RECOVERY DIODE CHIPS
2SH11	HITACHI	获取价格	Silicon N-Channel IGBT
2SH12	HITACHI	获取价格	Silicon N-Channel IGBT
2SH13	HITACHI	获取价格	Silicon N-Channel IGBT
2SH14	HITACHI	获取价格	Silicon N-Channel IGBT
2SH15	HITACHI	获取价格	Silicon N-Channel IGBT
2SH16	HITACHI	获取价格	Silicon N-Channel IGBT
2SH16-E	RENESAS	获取价格	75A, 600V, N-CHANNEL IGBT, TO-3PL, 3 PIN
2SH17	HITACHI	获取价格	Silicon N-Channel IGBT

与2SEPC820MY+TSS相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

2SEPC820MY+TSS

2SEPC820MY+TSS 数据手册

与2SEPC820MY+TSS相关器件

与2SEPC820MY+TSS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SEPC820MY+TSS

2SEPC820MY+TSS 数据手册

与2SEPC820MY+TSS相关器件

与2SEPC820MY+TSS相关文章

您还可以找

您在本页遇到什么问题？