生命周期: | Not Recommended | 零件包装代码: | TO-220AB |
包装说明: | SC-46, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.26 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 680 ns |
标称接通时间 (ton): | 355 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SH27 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH27 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH28 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH28 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH29 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH29 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH30 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH30 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH31 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH31 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching |