2SH20

更新时间： 2024-11-17 22:12:39

品牌	Logo	应用领域
日立 - HITACHI		晶体晶体管功率控制双极性晶体管栅局域网
页数	文件大小	规格书
8页	46K
描述
Silicon N-Channel IGBT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SH20 数据手册

ADE–208–293 (Z)

2SH20

Silicon N-Channel IGBT

1st. Edition

Feb. 1995

Application

TO–3P

High speed power switching

Features

• High speed switching

• Low on saturation voltage

1. Gate

2. Collector

3. Emitter

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Collector to emitter voltage

600

CES

———————————————————————————————————————————

Gate to emitter voltage

±20

GES

———————————————————————————————————————————

Collector current

———————————————————————————————————————————

Collector peak current

ic(peak)

———————————————————————————————————————————

Collector dissipation

P *

100

———————————————————————————————————————————

Channel temperature

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

* Value at Tc = 25°C

12 3 4 5 6 7 8

中文翻译

下载PDF

与2SH20相关器件

型号	品牌	获取价格	描述	数据表
2SH21	HITACHI	获取价格	Silicon N-Channel IGBT
2SH22	HITACHI	获取价格	Silicon N-Channel IGBT
2SH26	HITACHI	获取价格	Silicon N Channel IGBT High Speed Power Switching
2SH26	RENESAS	获取价格	Silicon N Channel IGBT High Speed Power Switching
2SH27	HITACHI	获取价格	Silicon N Channel IGBT High Speed Power Switching
2SH27	RENESAS	获取价格	Silicon N Channel IGBT High Speed Power Switching
2SH28	HITACHI	获取价格	Silicon N Channel IGBT High Speed Power Switching
2SH28	RENESAS	获取价格	Silicon N Channel IGBT High Speed Power Switching
2SH29	RENESAS	获取价格	Silicon N Channel IGBT High Speed Power Switching
2SH29	HITACHI	获取价格	Silicon N Channel IGBT High Speed Power Switching