生命周期: | Not Recommended | 零件包装代码: | TO-220AB |
包装说明: | SC-46, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.26 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 20 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最大降落时间(tf): | 600 ns |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 60 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 750 ns | 标称接通时间 (ton): | 380 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SH29 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH29 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH30 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH30 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH31 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH31 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SHA04IDC | ADAM-TECH |
获取价格 |
HEADER & HOUSING SYSTEMS | |
2SHA04TR | ADAM-TECH |
获取价格 |
HEADER & HOUSING SYSTEMS | |
2SHA04TS | ADAM-TECH |
获取价格 |
HEADER & HOUSING SYSTEMS | |
2SHA05IDC | ADAM-TECH |
获取价格 |
HEADER & HOUSING SYSTEMS |