生命周期: | Transferred | 零件包装代码: | TO-3PL |
包装说明: | TO-3PL, 3 PIN | 针数: | 2 |
Reach Compliance Code: | compliant | 风险等级: | 5.26 |
最大集电极电流 (IC): | 75 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SH26 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH26 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH27 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH27 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH28 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH28 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH29 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH29 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH30 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH30 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching |