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2SH22 PDF预览

2SH22

更新时间: 2024-11-08 22:12:39
品牌 Logo 应用领域
日立 - HITACHI 双极性晶体管
页数 文件大小 规格书
8页 45K
描述
Silicon N-Channel IGBT

2SH22 数据手册

 浏览型号2SH22的Datasheet PDF文件第2页浏览型号2SH22的Datasheet PDF文件第3页浏览型号2SH22的Datasheet PDF文件第4页浏览型号2SH22的Datasheet PDF文件第5页浏览型号2SH22的Datasheet PDF文件第6页浏览型号2SH22的Datasheet PDF文件第7页 
ADE–208–295 (Z)  
2SH22  
Silicon N-Channel IGBT  
1st. Edition  
Feb. 1995  
Application  
TO–3PL  
High speed power switching  
Features  
2
• High speed switching  
• Low on saturation voltage  
1
1. Gate  
2. Collector  
3. Emitter  
3
1
2
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Collector to emitter voltage  
V
600  
V
CES  
———————————————————————————————————————————  
Gate to emitter voltage  
V
±20  
V
GES  
———————————————————————————————————————————  
Collector current  
I
75  
A
C
———————————————————————————————————————————  
Collector peak current  
ic(peak)  
150  
A
———————————————————————————————————————————  
Collector dissipation  
P *  
200  
W
C
———————————————————————————————————————————  
Channel temperature  
T
150  
°C  
j
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
* Value at Tc = 25°C  
1

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