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2SF292200HYY

更新时间: 2024-11-21 07:31:59
品牌 Logo 应用领域
士兰微 - SILAN 二极管快恢复二极管快速恢复二极管
页数 文件大小 规格书
1页 29K
描述
FAST RECOVERY DIODE CHIPS

2SF292200HYY 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.84 V最大非重复峰值正向电流:390 A
元件数量:1最高工作温度:175 °C
最大输出电流:20 A最大重复峰值反向电压:200 V
最大反向恢复时间:0.2 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

2SF292200HYY 数据手册

  
2SF292200HYY  
2SF292200HYY FAST RECOVERY DIODE CHIPS  
DESCRIPTION  
Ø
2SF292200HYY is  
a
fast recodvioedrye chips  
fabricated in silicon epitaxial planar technology;  
Fast recovery times;  
Ø
Ø
Ø
Ø
Ø
Ø
Ø
High current capability;  
High surge current capability;  
Low forward voltage drop;  
Low reverse current leakage;  
Top metal is Ag, Back metal is Ag;  
Chip Size: 29m2m0 X 2920mm;  
Chip Topography and Dimensions  
Ø
Chip Thickness: 280±20mm;  
La: Chip Size:2920 mm;  
Lb: Pad Size: 2840 mm;  
ORDERING SPECIFICATIONS  
Product Name  
Specification  
For Au and AlSi wire bonding  
package  
2SF292200HYY  
ABSOLUTE MAXIMUM RATINGS  
Parameters  
Symbol  
Ratings  
Unit  
Maximum Repetitive Peak Reverse Voltage  
V
200  
20  
V
RRM  
Average Forward RectifiedCurrent@Tc=150°C  
Peak Forward Surge Current@8.3ms  
Maximum Operation Junction Temperature  
Storage Temperature Range  
I
A
A
FAV  
I
390  
FSM  
T
J
175  
°C  
°C  
T
•55~175  
STG  
ELECTRICAL CHARACTERISTICS (Tamb=25ć)  
Parameters  
Reverse Voltage  
Symbol  
Test Conditions  
I R=50ȝA  
I =5A  
Min.  
200  
••  
Max.  
••  
Unit  
V
V
BR  
V
F1  
V
F2  
I
R
0.84  
0.96  
25  
V
F
Forward Voltage  
I =20A  
F
••  
V
Reverse Current  
V =200V  
R
••  
ȝA  
ns  
Reverse recovery time  
Trr  
I =0.5A,I =1A;Irr=0.25A  
••  
200  
F
R
HANGZHOU SILAN MICROELECTRONICS CO.,LTD  
Http: www.silan.com.cn  
REV:1.0  
2008.06.06  
Page 1 of 1  

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