2SH17

更新时间： 2024-11-17 22:12:39

品牌	Logo	应用领域
日立 - HITACHI		晶体晶体管功率控制双极性晶体管栅局域网
页数	文件大小	规格书
8页	44K
描述
Silicon N-Channel IGBT

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数据手册

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2SH17 数据手册

ADE–208–290 (Z)

2SH17

Silicon N-Channel IGBT

1st. Edition

Feb. 1995

Application

TO–220AB

High speed power switching

Features

• High speed switching

• Low on saturation voltage

1. Gate

2. Collector

3. Emitter

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Collector to emitter voltage

600

CES

———————————————————————————————————————————

Gate to emitter voltage

±20

GES

———————————————————————————————————————————

Collector current

———————————————————————————————————————————

Collector peak current

ic(peak)

———————————————————————————————————————————

Collectorl dissipation

P *

———————————————————————————————————————————

Channel temperature

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

* Value at Tc = 25°C

12 3 4 5 6 7 8

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