生命周期: | Transferred | 零件包装代码: | TO-3P |
包装说明: | SC-65, TO-3P, 3 PIN | 针数: | 2 |
Reach Compliance Code: | compliant | 风险等级: | 5.26 |
Is Samacsys: | N | 最大集电极电流 (IC): | 36 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SH21 | HITACHI |
获取价格 |
Silicon N-Channel IGBT | |
2SH22 | HITACHI |
获取价格 |
Silicon N-Channel IGBT | |
2SH26 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH26 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH27 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH27 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH28 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH28 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH29 | RENESAS |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching | |
2SH29 | HITACHI |
获取价格 |
Silicon N Channel IGBT High Speed Power Switching |