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2SD2137 PDF预览

2SD2137

更新时间: 2024-11-11 22:52:47
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 56K
描述
Silicon NPN triple diffusion planar type(For power amplification)

2SD2137 数据手册

 浏览型号2SD2137的Datasheet PDF文件第2页浏览型号2SD2137的Datasheet PDF文件第3页 
Power Transistors  
2SD2137, 2SD2137A  
Silicon NPN triple diffusion planar type  
For power amplification  
Complementary to 2SB1417 and 2SB1417A  
Unit: mm  
Features  
High forward current transfer ratio hFE which has satisfactory linearity  
5.0±0.1  
Low collector to emitter saturation voltage VCE(sat)  
Allowing supply with the radial taping  
10.0±0.2  
1.0  
90°  
Absolute Maximum Ratings (T =25˚C)  
C
Parameter  
Symbol  
Ratings  
Unit  
1.2±0.1  
C1.0  
Collector to  
2SD2137  
2SD2137A  
2SD2137  
60  
2.25±0.2  
VCBO  
V
0.65±0.1  
1.05±0.1  
base voltage  
Collector to  
80  
0.35±0.1  
60  
0.55±0.1  
VCEO  
V
0.55±0.1  
emitter voltage 2SD2137A  
Emitter to base voltage  
Peak collector current  
Collector current  
80  
VEBO  
ICP  
6
V
A
A
C1.0  
1
2 3  
5
IC  
3
2.5±0.2  
2.5±0.2  
1:Base  
2:Collector  
3:Emitter  
Collector power TC=25°C  
15  
PC  
W
dissipation  
Ta=25°C  
2
MT4 Type Package  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Collector cutoff  
Symbol  
ICES  
Conditions  
min  
typ  
max  
100  
100  
100  
100  
100  
Unit  
2SD2137  
2SD2137A  
2SD2137  
2SD2137A  
VCE = 60V, VBE = 0  
µA  
current  
VCE = 80V, VBE = 0  
VCE = 30V, IB = 0  
VCE = 60V, IB = 0  
VEB = 6V, IC = 0  
Collector cutoff  
current  
ICEO  
IEBO  
VCEO  
µA  
µA  
V
Emitter cutoff current  
Collector to emitter 2SD2137  
voltage 2SD2137A  
60  
80  
70  
10  
IC = 30mA, IB = 0  
VCE = 4V, IC = 1A  
*
hFE1  
250  
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
VBE  
VCE = 4V, IC = 3A  
VCE = 4V, IC = 3A  
1.8  
1.2  
V
V
Collector to emitter saturation voltage VCE(sat)  
IC = 3A, IB = 0.375A  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
V
CE = 5V, IC = 0.2A, f = 10MHz  
30  
0.3  
2.5  
0.2  
MHz  
µs  
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,  
VCC = 50V  
µs  
µs  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
70 to 150  
120 to 250  
Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.  
1

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