Power Transistors
2SD2137, 2SD2137A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1417 and 2SB1417A
Unit: mm
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
5.0±0.1
●
Low collector to emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
10.0±0.2
1.0
●
90°
Absolute Maximum Ratings (T =25˚C)
■
C
Parameter
Symbol
Ratings
Unit
1.2±0.1
C1.0
Collector to
2SD2137
2SD2137A
2SD2137
60
2.25±0.2
VCBO
V
0.65±0.1
1.05±0.1
base voltage
Collector to
80
0.35±0.1
60
0.55±0.1
VCEO
V
0.55±0.1
emitter voltage 2SD2137A
Emitter to base voltage
Peak collector current
Collector current
80
VEBO
ICP
6
V
A
A
C1.0
1
2 3
5
IC
3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
Collector power TC=25°C
15
PC
W
dissipation
Ta=25°C
2
MT4 Type Package
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICES
Conditions
min
typ
max
100
100
100
100
100
Unit
2SD2137
2SD2137A
2SD2137
2SD2137A
VCE = 60V, VBE = 0
µA
current
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
Collector cutoff
current
ICEO
IEBO
VCEO
µA
µA
V
Emitter cutoff current
Collector to emitter 2SD2137
voltage 2SD2137A
60
80
70
10
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
*
hFE1
250
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
1.8
1.2
V
V
Collector to emitter saturation voltage VCE(sat)
IC = 3A, IB = 0.375A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
V
CE = 5V, IC = 0.2A, f = 10MHz
30
0.3
2.5
0.2
MHz
µs
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
µs
µs
*hFE1 Rank classification
Rank
hFE1
Q
P
70 to 150
120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.
1