Datasheet > 2SD2137(TO-220)

2SD2137(TO-220)

更新时间： 2024-11-13 08:17:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	240K
描述
Transistor

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2SD2137(TO-220) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 Plastic-Encapsulate Transistors

TO-220

2SD2137 TRANSISTOR (NPN)

FEATURES

1. BASE

High forward current transfer ratio h_FEwhich has satisfactory linearity

2. COLLECTOR

3. EMITTER

Low collector to emitter saturation voltage V_CE(sat)

Allowing supply with the radial taping

MAXIMUM RATINGS(T_A=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

℃

T_J

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V_(BR)CBOI_C=0.1mA, I_E=0

V_(BR)CEOI_C=30mA, I_B=0

V_(BR)EBOI_E=0.1mA, I_C=0

Collector cut-off current

Emitter cut-off current

I_CBO

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

f_T

V_CB=60V, I_E=0

V_EB=6V, I_C=0

V_CE=4V, I_C=1A

V_CE=4V, I_C=3A

100

320

μA

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Turn-on time

I_C=3A, I_B=375mA

1.2

1.8

V_CE=4V, I_C=3A

V_CE=5V, I_C=0.2A, f=10MHz

0.3

2.5

0.2

MHz

μs

t_on

Switch time

t_stg

V_CC=50V,I_C=1A, I_B1=-I_B2=0.1A

μs

Storage time

Fall time

t_f

μs

CLASSIFICATION OF h_FE(1)

Rank

Range

70-150

120-250

160-320

A,Mar,2011

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