2SD2137A

更新时间： 2024-11-11 22:52:47

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	57K
描述
Silicon PNP epitaxial planar type(For power amplification)

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中文翻译

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数据手册

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2SD2137A 数据手册

Power Transistors

2SB1417, 2SB1417A

Silicon PNP epitaxial planar type

For power amplification

Complementary to 2SD2137 and 2SD2137A

Unit: mm

Features

■

●

High forward current transfer ratio h_FEwhich has satisfactory linearity

5.0±0.1

●

Low collector to emitter saturation voltage V_CE(sat)

10.0±0.2

1.0

●

Allowing automatic insertion with radial taping

90°

Absolute Maximum Ratings (T =25˚C)

■

Parameter

Symbol

Ratings

Unit

1.2±0.1

C1.0

Collector to

2SB1417

2SB1417A

2SB1417

–60

2.25±0.2

V_CBO

0.65±0.1

1.05±0.1

base voltage

Collector to

–80

0.35±0.1

–60

0.55±0.1

V_CEO

0.55±0.1

emitter voltage 2SB1417A

Emitter to base voltage

Peak collector current

Collector current

–80

V_EBO

I_CP

–6

C1.0

2 3

–5

I_C

–3

2.5±0.2

1:Base

2:Collector

3:Emitter

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

2.0

MT4 Type Package

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CES

Conditions

min

typ

max

–100

Unit

2SB1417

2SB1417A

2SB1417

2SB1417A

V_CE= –60V, V_BE= 0

µA

current

V_CE= –80V, V_BE= 0

V_CE= –30V, I_B= 0

V_CE= –60V, I_B= 0

V_EB= –6V, I_C= 0

Collector cutoff

current

I_CEO

I_EBO

V_CEO

µA

Emitter cutoff current

Collector to emitter 2SB1417

voltage 2SB1417A

–60

–80

I_C= –30mA, I_B= 0

h_FE1

V_CE= –4V, I_C= –1A

250

Forward current transfer ratio

Base to emitter voltage

h_FE2

V_BE

V_CE= –4V, I_C= –3A

–1.8

–1.2

Collector to emitter saturation voltage V_CE(sat)

I_C= –3A, I_B= – 0.375A

V_CE= –5V, I_C= – 0.2A, f = 10MHz

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

0.3

1.0

0.2

MHz

µs

I_C= –1A, I_B1= – 0.1A, I_B2= 0.1A,

V_CC= –50V

µs

^*h_FE1Rank classification

Rank

h_FE1

70 to 150

120 to 250

Note: Ordering can be made by the common rank (PQ rank h_FE1= 70 to 250) in the rank classification.

12 3

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