Datasheet > 2SD2138AQ

2SD2138AQ

更新时间： 2024-09-23 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	67K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR

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中文翻译

获取价格

数据手册

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2SD2138AQ 数据手册

Power Transistors

2SD2138, 2SD2138A

Silicon NPN triple diffusion planar type Darlington

Unit: mm

For power amplification

10.0 0.ꢀ

5.0 0.1

1.0 0.ꢀ

Complementary to 2SB1418 and 2SB1418A

I Features

•

High forward current transfer ratio h_FEwhich has satisfactory

linearity

Allowing supply with the radial taping

1.ꢀ 0.1

C 1.0

1.48 0.ꢀ

ꢀ.ꢀ5 0.ꢀ

•

0.65 0.1

0.35 0.1

0.65 ^0.1

I Absolute Maximum Ratings T_C= 25°C

1.05 0.1

0.55 ^0.1

0.55 0.1

Parameter

Symbol

Rating

Unit

ꢀ.5 0.ꢀ

2SD2138

2SD2138A

2SD2138

2SD2138A

V_CBO

Collector to base

ꢀ 3

voltage

1: Emitter

2: Collector

3: Base

V_CEO

Collector to

emitter voltage

MT-4 (MT4 Type Package)

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

Internal Connection

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

Conditions

V_CE= 60 V, I_E= 0

_CE= 80 V, I_E= 0

Min

Typ

Max

100

Unit

2SD2138

2SD2138A

2SD2138

2SD2138A

I_CBO

µA

Collector cutoff

current

I_CEO

V_CE= 30 V, I_B= 0

V_CE= 40 V, I_B= 0

V_EB= 5 V, I_C= 0

I_C= 30 mA, I_B= 0

µA

Collector cutoff

current

Emitter cutoff current

I_EBO

µA

2SD2138

V_CEO

Collector to emitter

voltage

2SD2138A

Forward current transfer ratio

h_FE1

V_CE= 4 V, I_C= 1 A

1 000

2 000

h_FE2

V_CE= 4 V, I_C= 2 A

10 000

2.8

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

V_BE

V_CE(sat)

f_T

V_CE= 4 V, I_C= 2 A

I_C= 2 A, I_B= 8 mA

2.5

V_CE= 10 V, I_C= 0.5 A, f = 1 MHz

I_C= 2 A, I_B1= 8 mA, I_B2= −8 mA,

V_CC= 50 V

0.4

MHz

µs

t_on

Turn-off time

t_off

µs

Note) : Rank classification

Rank

h_FE2

2 000 to 5 000 4 000 to 10 000

12 3

中文翻译

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与2SD2138AQ相关器件

型号	品牌	获取价格	描述	数据表
2SD2138AR	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SD2138P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SD2138Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SD2138R	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SD2139	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For high-current amplification ratio, power ampli
2SD2139O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SD2139P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SD2139Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SD2140	ISC	获取价格	Silicon NPN Power Transistor
2SD2140	PANASONIC	获取价格	Power Bipolar Transistor, 7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,