Datasheet > 2SD2137AR

2SD2137AR

更新时间： 2024-11-11 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	69K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 3A I(C) \| TO-126VAR

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中文翻译

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数据手册

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2SD2137AR 数据手册

Power Transistors

2SD2137, 2SD2137A

Silicon NPN triple diffusion planar type

Unit: mm

For power amplification

10.0 0.ꢀ

5.0 0.1

1.0 0.ꢀ

Complementary to 2SB1417 and 2SB1417A

I Features

•

High forward current transfer ratio h_FEwhich has satisfactory

linearity

1.ꢀ 0.1

C 1.0

•

Low collector to emitter saturation voltage V_CE(sat)

Allowing supply with the radial taping

1.48 0.ꢀ

ꢀ.ꢀ5 0.ꢀ

0.65 0.1

0.35 0.1

I Absolute Maximum Ratings T_C= 25°C

0.65 ^0.1

Parameter

Symbol

Rating

Unit

1.05 0.1

0.55 ^0.1

0.55 0.1

2SD2137

2SD2137A

2SD2137

2SD2137A

V_CBO

Collector to base

ꢀ.5 0.ꢀ

voltage

ꢀ 3

V_CEO

Collector to

1: Emitter

2: Collector

3: Base

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

MT-4 (MT4 Type Package)

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

Conditions

V_CE= 60 V, V_BE= 0

_CE= 80 V, V_BE= 0

Min

Typ

Max

100

Unit

2SD2137

2SD2137A

2SD2137

2SD2137A

I_CES

µA

Collector cutoff

current

I_CEO

V_CE= 30 V, I_B= 0

V_CE= 60 V, I_B= 0

V_EB= 6 V, I_C= 0

I_C= 30 mA, I_B= 0

µA

Collector cutoff

current

Emitter cutoff current

I_EBO

µA

2SD2137

V_CEO

Collector to emitter

voltage

2SD2137A

Forward current transfer ratio

h_FE1

V_CE= 4 V, I_C= 1 A

V_CE= 4 V, I_C= 3 A

I_C= 3 A, I_B= 0.375 A

250

h_FE2

V_BE

V_CE(sat)

f_T

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

1.8

1.2

V_CE= 5 V, I_C= 0.2 A, f = 10 MHz

I_C= 1 A, I_B1= 0.1 A, I_B2= − 0.1 A,

V_CC= 50 V

0.3

2.5

0.2

MHz

µs

t_on

Storage time

t_stg

µs

Fall time

t_f

µs

Note) : Rank classification

Ordering can be made by the common rank (PQ rank h_FE1= 70 to 250) in the

rank classification.

Rank

h_FE1

70 to 150

120 to 250

12 3 4

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与2SD2137AR相关器件

型号	品牌	获取价格	描述	数据表
2SD2137O	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SD2137P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SD2137PQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-126VAR
2SD2137Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SD2137Q(TO-220)	CJ	获取价格	Transistor
2SD2137R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-126VAR
2SD2138	PANASONIC	获取价格	Silicon NPN triple diffusion planar type Darlington(For power amplification)
2SD2138/2SD2138A	ETC	获取价格	2SD2138. 2SD2138A - NPN Transistor Darlington
2SD2138A	PANASONIC	获取价格	Silicon PNP epitaxial planar type Darlington(For power amplification)
2SD2138AP	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 2A I(C) \| TO-221VAR