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2SD2137AR PDF预览

2SD2137AR

更新时间: 2024-11-11 23:20:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 69K
描述
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126VAR

2SD2137AR 数据手册

 浏览型号2SD2137AR的Datasheet PDF文件第2页浏览型号2SD2137AR的Datasheet PDF文件第3页浏览型号2SD2137AR的Datasheet PDF文件第4页 
Power Transistors  
2SD2137, 2SD2137A  
Silicon NPN triple diffusion planar type  
Unit: mm  
For power amplification  
10.0 0.ꢀ  
5.0 0.1  
1.0 0.ꢀ  
Complementary to 2SB1417 and 2SB1417A  
I Features  
High forward current transfer ratio hFE which has satisfactory  
linearity  
1.ꢀ 0.1  
C 1.0  
Low collector to emitter saturation voltage VCE(sat)  
Allowing supply with the radial taping  
1.48 0.ꢀ  
ꢀ.ꢀ5 0.ꢀ  
0.65 0.1  
0.35 0.1  
I Absolute Maximum Ratings TC = 25°C  
0.65 0.1  
Parameter  
Symbol  
Rating  
Unit  
1.05 0.1  
0.55 0.1  
0.55 0.1  
2SD2137  
2SD2137A  
2SD2137  
2SD2137A  
VCBO  
60  
V
Collector to base  
ꢀ.5 0.ꢀ  
ꢀ.5 0.ꢀ  
voltage  
80  
1
ꢀ 3  
VCEO  
60  
V
Collector to  
1: Emitter  
2: Collector  
3: Base  
emitter voltage  
80  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
IC  
6
V
A
MT-4 (MT4 Type Package)  
5
3
A
TC = 25°C  
Ta = 25°C  
PC  
15  
W
Collector power  
dissipation  
2
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
I Electrical Characteristics TC = 25°C  
Parameter  
Symbol  
Conditions  
VCE = 60 V, VBE = 0  
CE = 80 V, VBE = 0  
Min  
Typ  
Max  
100  
100  
100  
100  
100  
Unit  
2SD2137  
2SD2137A  
2SD2137  
2SD2137A  
ICES  
µA  
Collector cutoff  
current  
V
ICEO  
VCE = 30 V, IB = 0  
VCE = 60 V, IB = 0  
VEB = 6 V, IC = 0  
IC = 30 mA, IB = 0  
µA  
Collector cutoff  
current  
Emitter cutoff current  
IEBO  
µA  
2SD2137  
VCEO  
60  
80  
70  
10  
V
Collector to emitter  
voltage  
2SD2137A  
*
Forward current transfer ratio  
hFE1  
VCE = 4 V, IC = 1 A  
VCE = 4 V, IC = 3 A  
VCE = 4 V, IC = 3 A  
IC = 3 A, IB = 0.375 A  
250  
hFE2  
VBE  
VCE(sat)  
fT  
Base to emitter voltage  
Collector to emitter saturation voltage  
Transition frequency  
Turn-on time  
1.8  
1.2  
V
V
VCE = 5 V, IC = 0.2 A, f = 10 MHz  
IC = 1 A, IB1 = 0.1 A, IB2 = 0.1 A,  
VCC = 50 V  
30  
0.3  
2.5  
0.2  
MHz  
µs  
ton  
Storage time  
tstg  
µs  
Fall time  
tf  
µs  
Note) : Rank classification  
*
Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the  
rank classification.  
Rank  
Q
R
hFE1  
70 to 150  
120 to 250  
1

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