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2SD2142 PDF预览

2SD2142

更新时间: 2024-11-12 07:31:43
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金誉半导体 - HTSEMI /
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描述
TRANSISOR (NPN)

2SD2142 数据手册

  
2S 2142  
D
TRANSISOR (NPN)  
SOT23  
FEATURES  
Darlington Connection for a High hFE  
High Input Impedance  
MARKING: R1M  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
40  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
32  
V
12  
Collector Current  
300  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
200  
PC  
RΘJA  
Tj  
625  
150  
Storage Temperature  
Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol Test  
conditions  
Min  
Typ  
Max  
Unit  
V(BR)CBO IC=100µA, IE=0  
V(BR)CEO IC=10mA, IB=0  
V(BR)EBO IE=100µA, IC=0  
40  
32  
12  
V
Collector-base breakdown voltage  
V
V
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
ICBO  
IEBO  
hFE  
VCB=30V, IE=0  
0.1  
0.1  
µA  
µA  
VEB=12V, IC=0  
Emitter cut-off current  
VCE=3V, IC=100mA  
IC=200mA, IB=0.2mA  
VCE=5V,IC=10mA, f=100MHz  
VCB=10V, IE=0, f=1MHz  
5000  
DC current gain  
VCE(sat)  
fT  
1.4  
V
Collector-emitter saturation voltage  
Transition frequency  
200  
2.5  
MHz  
pF  
Cob  
Collector output capacitance  
1
JinYu  
semiconductor  
www.htsemi.com  

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