Datasheet > 2SD2139P

2SD2139P

更新时间： 2024-09-23 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	66K
描述
TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR

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中文翻译

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数据手册

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2SD2139P 数据手册

Power Transistors

2SD2139

Silicon NPN triple diffusion planar type

Unit: mm

For high-current amplification ratio, power amplification

10.0 0.ꢀ

5.0 0.1

1.0 0.ꢀ

I Features

•

High forward current transfer ratio h_FE

Satisfactory linearity of forward current transfer ratio h_FE

Allowing supply with the radial taping

1.ꢀ 0.1

C 1.0

1.48 0.ꢀ

ꢀ.ꢀ5 0.ꢀ

0.65 0.1

0.35 0.1

0.65 ^0.1

I Absolute Maximum Ratings T_C= 25°C

1.05 0.1

0.55 ^0.1

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

0.55 0.1

ꢀ.5 0.ꢀ

ꢀ 3

1: Base

2: Collector

3: Emitter

I_C

MT-4 (MT4 Type Package)

Base current

I_B

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

100

Unit

µA

Collector cutoff current

V_CB= 80 V, I_E= 0

V_CE= 40 V, I_B= 0

V_EB= 6 V, I_C= 0

I_CEO

Emitter cutoff current

I_EBO

Collector to emitter voltage

Forward current transfer ratio ^*

Collector to emitter saturation voltage

Transition frequency

V_CEO

h_FE

I_C= 25 mA, I_B= 0

V_CE= 4 V, I_C= 0.5 A

I_C= 2 A, I_B= 0.05 A

500

2 500

V_CE(sat)

f_T

V_CE= 12 V, I_C= 0.2 A, f = 10 MHz

MHz

Note) : Rank classification

Rank

h_FE

500 to 1 000 800 to 1 500 1 200 to 2 500

12 3 4

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