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2SD2142 PDF预览

2SD2142

更新时间: 2024-09-24 06:16:07
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 213K
描述
NPN Plastic Plastic-Encapsulate Transistor

2SD2142 数据手册

 浏览型号2SD2142的Datasheet PDF文件第2页 
2SD2142  
NPN Plastic  
Plastic-Encapsulate Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
SOT-23  
Min  
3.COLLECTOR  
Dim  
A
B
C
D
G
H
J
Max  
FEATURES  
2.800 3.040  
1.200 1.400  
0.890 1.110  
0.370 0.500  
1.780 2.040  
0.013 0.100  
0.085 0.177  
0.450 0.600  
0.890 1.020  
2.100 2.500  
0.450 0.600  
z
Darlington connection for a high hFE  
High input impedance  
1.BASE  
2.EMITTER  
z
A
L
MARKINGR1M  
3
S
C
Top View2  
B
1
K
L
V
G
S
V
All Dimension in mm  
H
J
D
K
oC  
MAXIMUM RATINGS* TA=25 unless otherwise noted  
Symbol  
VCBO  
Parameter  
Value  
Units  
40  
V
V
Collector-Base Voltage  
VCEO  
VEBO  
IC  
32  
12  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
300  
Collector Current -Continuous  
Collector Dissipation  
mA  
mW  
oC  
PC  
200  
TJ, Tstg  
-55~150  
Junction and Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
40  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=100μA,IE=0  
V(BR)CEO IC=10mA,IB=0  
V(BR)EBO IE=100μA,IC=0  
32  
V
12  
V
ICBO  
IEBO  
hFE  
VCB=30V,IE=0  
0.1  
0.1  
μA  
μA  
Emitter cut-off current  
VEB=12V,IC=0  
DC current gain  
VCE=3V,IC=100mA  
IC=200mA,IB=0.2mA  
VCE=5V,IC=10mA,f=100MHz  
VCB=10V,IE=0,f=1MHz  
5000  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
1.4  
V
200  
2.5  
MHz  
pF  
Collector output capacitance  
Cob  
Any changing of specification will not be informed individual  
http://www.SeCoSGmbH.com  
01-Jun-2007 Rev. A  
Page 1 of 2  

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