Datasheet > 2SD2142_11

2SD2142_11

更新时间： 2024-09-24 12:50:07

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	335K
描述
NPN Plastic-Encapsulate Transistor

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数据手册

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2SD2142_11 数据手册

2SD2142

0.3A , 40V

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURE

ꢀ

Darlington connection for a high h_FE.

High input impedance.

ꢀ

Top View

C B

MARKING

R1M

PACKAGE INFORMATION

Package

MPQ

LeaderSize

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

2.80

2.10

1.20

0.89

1.78

0.30

3.04

2.55

1.40

1.15

2.04

0.50

0.09

0.45

0.08

0.6 REF.

0.89

0.18

0.60

0.177

SOT-23

7’ inch

1.02

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Symbol

Ratings

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

300

°C / W

°C

P_C

200

Thermal Resistance From Junction to Ambient

Junction, Storage Temperature

R_θJA

T_J, T_STG

625

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

I_C=100µA, I_E=0

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10mA, I_B=0

I_E=100µA, I_C=0

V_CB=30V, I_E=0

0.1

µA

Emitter Cut-Off Current

I_EBO

V_EB=12V, I_C=0

DC Current Gain

h_FE

5000

V_CE=3V, I_C=100mA

I_C=200mA, I_B=0.2mA

Collector to Emitter Saturation Voltage

Transition Frequency

V_CE(sat)

f_T

1.4

200

2.5

MHz V_CE=5V, I_C=10mA, f=100MHz

pF V_CB=10V, I_E=0, f=1MHz

Collector Output Capacitance

C_ob

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

04-Mar-2011 Rev. B

Page 1 of 2

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