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2SD2137Q(TO-220) PDF预览

2SD2137Q(TO-220)

更新时间: 2024-11-12 14:50:39
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
2页 240K
描述
Transistor

2SD2137Q(TO-220) 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SD2137Q(TO-220) 数据手册

 浏览型号2SD2137Q(TO-220)的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-220 Plastic-Encapsulate Transistors  
TO-220  
2SD2137 TRANSISTOR (NPN)  
FEATURES  
1. BASE  
z
z
z
High forward current transfer ratio hFE which has satisfactory linearity  
2. COLLECTOR  
3. EMITTER  
Low collector to emitter saturation voltage VCE(sat)  
Allowing supply with the radial taping  
MAXIMUM RATINGS(TA=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Value  
Units  
V
60  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
60  
V
6
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
3
2
A
PC  
W
TJ  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V(BR)CBO IC=0.1mA, IE=0  
V(BR)CEO IC=30mA, IB=0  
V(BR)EBO IE=0.1mA, IC=0  
60  
60  
6
V
V
V
Collector cut-off current  
Emitter cut-off current  
ICBO  
IEBO  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
fT  
VCB=60V, IE=0  
VEB=6V, IC=0  
VCE=4V, IC=1A  
VCE=4V, IC=3A  
100  
100  
320  
μA  
μA  
70  
10  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter voltage  
Transition frequency  
Turn-on time  
IC=3A, IB=375mA  
1.2  
1.8  
V
V
VCE=4V, IC=3A  
VCE=5V, IC=0.2A, f=10MHz  
30  
0.3  
2.5  
0.2  
MHz  
μs  
ton  
Switch time  
tstg  
VCC=50V,IC=1A, IB1=-IB2=0.1A  
μs  
Storage time  
Fall time  
tf  
μs  
CLASSIFICATION OF hFE(1)  
Rank  
Q
P
O
Range  
70-150  
120-250  
160-320  
A,Mar,2011  

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