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2SD2137AO PDF预览

2SD2137AO

更新时间: 2024-11-12 20:18:07
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
1页 106K
描述
Transistor

2SD2137AO 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Is Samacsys:NBase Number Matches:1

2SD2137AO 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-220 Plastic-Encapsulate Transistors  
TO – 220  
2SD2137A TRANSISTOR (NPN)  
1. BASE  
FEATURES  
2. COLLECTOR  
3. EMITTER  
z
z
z
High DC Current Gain  
Low Collector to Emitter Saturation Voltage VCE(sat)  
Allowing Automatic Insertion with Radial Taping  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
Unit  
V
80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
V
6
V
Collector Current  
3
2
A
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
W
RθJA  
Tj  
63  
/W  
150  
Tstg  
Storage Temperature  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
80  
80  
6
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=100µA,IE=0  
IC=30mA,IB=0  
V
IE=100µA,IC=0  
VCB=80V,IE=0  
V
100  
100  
100  
320  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
VCE=60V,IB=0  
Emitter cut-off current  
IEBO  
VEB=6V,IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
VCE=4V, IC=1A  
VCE=4V, IC=3A  
IC=3A,IB=0.375A  
VCE=4V, IC=3A  
VCE=5V,IC=0.2A, f=10MHz  
70  
10  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter voltage  
1.2  
1.8  
V
V
fT  
30  
MHz  
Transition frequency  
CLASSIFICATION OF hFE(1)  
RANK  
Q
P
O
RANGE  
70-150  
120-250  
160-320  
A,Dec,2010  

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