2SD2137

更新时间： 2024-11-12 04:26:15

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
1页	57K
描述
Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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2SD2137 数据手册

Transys

Electronics

I M I T E D

TO-220 Plastic-Encapsulated Transistors

2SD2137 TRANSISTOR (NPN)

TO-220

1. BASE

FEATURES

Power dissipation

2. COLLECTOR

3. EMITTER

P_CM:

W (Tamb=25℃)

Collector current

I_CM:

1 2 3

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=1mA, I_E=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=30mA, I_B=0

I_E=1mA, I_C=0

µA

V_CB=60V, I_E=0

V_EB=6V, I_C=0

100

320

I_EBO

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=4V, I_C=1A

DC current gain

V_CE=4V, I_C=3A

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Turn-on time

I_C=3A, I_B=375mA

1.2

1.8

V_CE=4V, I_C=3A

MHz

µs

f_T

V_CE=5V, I_C=0.2A, f=10MHz

0.3

2.5

0.2

t_on

V_CC=50V, I_C=1A, I_B1=0.1A, I_B2=-0.1A

Switch time

t_stg

µs

Storage time

Fall time

t_f

µs

CLASSIFICATION OF h_FE(1)

Rank

Range

70-150

120-250

160-320

中文翻译

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