Datasheet > 2SD2136P

2SD2136P

更新时间： 2024-11-11 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	63K
描述
TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR

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中文翻译

获取价格

数据手册

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2SD2136P 数据手册

Power Transistors

2SD2136

Silicon NPN triple diffusion planar type

Unit: mm

7.5±±.ꢀ

4.5±±.ꢀ

For power amplification

Complementary to 2SB1416

±.65±±.1

±.85±±.1

1.±±±.1

I Features

±.8 C

•

High forward current transfer ratio h_FEwhich has satisfactory

linearity

±.7±±.1

•

Low collector to emitter saturation voltage V_CE(sat)

Allowing supply with the radial taping

1.15±±.ꢀ

±.5±±.1

±.4±±.1

I Absolute Maximum Ratings T_C= 25°C

±.8 C

ꢀ

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

1: Base

2: Collector

3: Emitter

ꢀ.5±±.ꢀ

MT-3 (MT3 Type Package)

I_C

1.5

Collector power dissipation

Junction temperature

Storage temperature

P_C

°C

T_j

150

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CES

Conditions

Min

Typ

Max

200

300

Unit

µA

Collector cutoff current

V_CE= 60 V, V_BE= 0

V_CE= 60 V, I_B= 0

V_EB= 6 V, I_C= 0

I_CEO

Emitter cutoff current

I_EBO

Collector to emitter voltage

Forward current transfer ratio

V_CEO

I_C= 30 mA, I_B= 0

V_CE= 4 V, I_C= 1 A

V_CE= 4 V, I_C= 3 A

I_C= 3 A, I_B= 0.375 A

h_FE1

250

h_FE2

V_BE

V_CE(sat)

f_T

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

1.8

1.2

V_CE= 5 V, I_E= − 0.1 A, f = 200 MHz

I_C= 1 A, I_B1= 0.1 A, I_B2= − 0.1 A

220

0.5

2.5

0.4

MHz

µs

t_on

Storage time

t_stg

µs

Fall time

t_f

µs

Note) : Rank classification

Rank

h_FE1

40 to 90

70 to 150

120 to 250

12 3

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