Power Transistors
2SD2136
Silicon NPN triple diffusion planar type
Unit: mm
7.5±±.ꢀ
4.5±±.ꢀ
For power amplification
Complementary to 2SB1416
±.65±±.1
±.85±±.1
1.±±±.1
I Features
±.8 C
±.8 C
•
High forward current transfer ratio hFE which has satisfactory
linearity
±.7±±.1
±.7±±.1
•
•
Low collector to emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
1.15±±.ꢀ
1.15±±.ꢀ
±.5±±.1
±.4±±.1
I Absolute Maximum Ratings TC = 25°C
±.8 C
1
ꢀ
3
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
Unit
V
60
1: Base
2: Collector
3: Emitter
ꢀ.5±±.ꢀ
ꢀ.5±±.ꢀ
60
V
6
V
MT-3 (MT3 Type Package)
5
A
IC
3
1.5
A
Collector power dissipation
Junction temperature
Storage temperature
PC
W
°C
°C
Tj
150
Tstg
−55 to +150
I Electrical Characteristics TC = 25°C
Parameter
Symbol
ICES
Conditions
Min
Typ
Max
200
300
1
Unit
µA
µA
mA
V
Collector cutoff current
VCE = 60 V, VBE = 0
VCE = 60 V, IB = 0
VEB = 6 V, IC = 0
ICEO
Emitter cutoff current
IEBO
Collector to emitter voltage
Forward current transfer ratio
VCEO
IC = 30 mA, IB = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
60
40
10
*
hFE1
250
hFE2
VBE
VCE(sat)
fT
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
1.8
1.2
V
V
VCE = 5 V, IE = − 0.1 A, f = 200 MHz
IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A
220
0.5
2.5
0.4
MHz
µs
ton
Storage time
tstg
µs
Fall time
tf
µs
Note) : Rank classification
*
Rank
P
Q
R
hFE1
40 to 90
70 to 150
120 to 250
1