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2SD2136-R PDF预览

2SD2136-R

更新时间: 2024-09-25 01:08:07
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描述
NPN Plastic Encapsulated Transistor

2SD2136-R 数据手册

 浏览型号2SD2136-R的Datasheet PDF文件第2页 
2SD2136  
3A , 60V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
TO-126  
Low frequency power amplifier  
Low Collector-Emitter Saturation Voltage VCE(sat)  
High Forward Current Transfer Ratio hFE Which has  
Satisfactory Linearity.  
1Emitter  
2Collector  
3Base  
A
B
E
CLASSIFICATION OF hFE (1)  
F
C
D
Product-Rank  
2SD2136-P  
2SD2136-Q  
70~150  
2SD2136-R  
120~250  
N
H
J
L
Range  
40~90  
M
K
Collector  
G
2
Millimeter  
Min. Max.  
Millimeter  
REF.  
REF.  
Min.  
1.10  
0.45  
0.66  
2.10  
1.17  
3.00  
Max.  
1.50  
0.60  
0.86  
2.30  
1.37  
3.20  
A
B
C
D
E
F
7.40  
2.50  
7.80  
2.90  
H
J
K
L
M
N
3
Base  
10.60  
15.30  
3.70  
11.00  
15.70  
3.90  
1
Emitter  
3.90  
4.10  
G
2.29 TYP.  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
IC  
60  
60  
V
V
Collector to Emitter Voltage  
Emitter to Base Voltage  
6
V
Collector Current - Continuous  
Collector Power Dissipation  
3
A
PC  
1.25  
100  
W
Thermal Resistance From Junction To Ambient  
Junction, Storage Temperature  
RθJA  
TJ, TSTG  
°C / W  
°C  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ. Max.  
Unit  
Test Conditions  
IC=0.1mA, IE=0  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage 1  
Emitter to Base Breakdown Voltage  
Collector Cut – Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
60  
60  
6
-
-
-
-
V
V
IC=30mA, IB=0  
IE=0.1mA, IC=0  
VCB=60V, IE=0  
VCE=60V, IB=0  
-
-
V
-
-
200  
300  
1
µA  
µA  
Collector Cut – Off Current  
ICEO  
-
-
Emitter Cut – Off Current  
IEBO  
-
-
mA VEB=6V, IC=0  
VCE=4V, IC=1A  
hFE (1)  
hFE (2)  
VCE(sat)  
VBE  
40  
10  
-
-
250  
-
DC Current Gain 1  
-
VCE=4V, IC=3A  
Collector to Emitter Saturation Voltage 1  
Collector Output Capacitance 1  
Transition Frequency  
-
1.2  
1.8  
-
V
V
IC=3A, IB=375mA  
VCE=4V, IC=3A  
-
-
fT  
-
30  
MHz VCE=5V, IC=100mA, f=10MHz  
Note:  
1. Pulse test: pulse width 300µs, duty cycle2.0%.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
03-Dec-2013 Rev. A  
Page 1 of 2  

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