Datasheet > 2SD2136Q(TO-126)

2SD2136Q(TO-126)

更新时间： 2024-01-10 02:04:14

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	107K
描述
Transistor

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技术参数
数据手册

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2SD2136Q(TO-126) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	3 A
配置：	Single	最小直流电流增益 (hFE)：	70
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1.25 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SD2136Q(TO-126) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

2SD2136 TRANSISTOR (NPN)

TO – 126

FEATURES

1. EMITTER

2. COLLECTOR

3. BASE

High Forward Current Transfer Ratio h_FEWhich has

Satisfactory Linearity.

Low Collector-Emitter Saturation Voltage V_CE(sat)

Allowing Supply with the Radial Taping

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

1.25

100

150

-55~+150

R_θJA

T_j

℃/W

℃

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=100µA,I_E=0

I_C=30mA,I_B=0

V_(BR)CEO

V_(BR)EBO

I_CBO

I_E= 100µA,I_C=0

V_CB=60V,I_E=0

200

300

μA

Collector cut-off current

I_CEO

V_CE=60V,I_B=0

Emitter cut-off current

I_EBO

V_EB=6V,I_C=0

h_FE(1)

V_CE=4V, I_C=1A

V_CE=4V, I_C=3A

I_C=3A,I_B=0.375A

V_CE=4V, I_C=3A

V_CE=5V,I_C=0.1A, f=10MHz

250

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

1.2

1.8

V_BE

Transition frequency

f_T

MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

CLASSIFICATION OF h_FE(1)

RANK

RANGE

40-90

70-150

120-250

A,Dec,2010

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