Datasheet > 2SD1898

2SD1898

更新时间： 2024-11-09 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
3页	268K
描述
SOT-89 Plastic-Encapsulate Transistors

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2SD1898 数据手册

WILLAS

2SD1898

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN)

SOT-89

FEATURES

High Breakdown Voltage and Current

Excellent DC Current Gain Linearity

Pb-Free package is available

1. BASE

2. COLLECTOR

3. EMITTER

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Low Collector-Emitter Saturation Voltage

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

100

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

℃

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=50µA,I_E=0

Min

100

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_B=0

I_E=50µA,I_C=0

V_CB=80V,I_E=0

µA

Emitter cut-off current

I_EBO

V_EB=4V,I_C=0

DC current gain

h_FE

V_CE=3V, I_C=500mA

I_C=500mA,I_B=20mA

VCE=10V,IC=50mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

390

0.4

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

100

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

RANK

RANGE

82–180

120–270

180–390

MARKING

2012-10

WILLAS ELECTRONIC CORP.

12 3

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