2SD1898R-G

更新时间： 2024-11-24 13:04:23

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
3页	123K
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中文翻译

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数据手册

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2SD1898R-G 数据手册

UTC2SD1898 NPN EPITAXIAL SILICON TRANSISTOR

POWER TRANSISTOR

FEATURES

*High VCEO= 80V

*High IC= 1A (DC)

*Good hFE linearity.

*Low V^CE(sat)

*Complements the 2SB1260.

SOT-89

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )

PARAMETER

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

100

Collector Current(DC)

Collector Current(PULSE)*1

Collector Power Dissipation*2

Junction Temperature

Icp

0.5

°C

150

-55 ~ +150

Storage Temperature

TSTG

*1 Duty=/1/2,Pw=200ms

*2 When mounted on a 40*40*0.7 mm ceramic board.

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C,unless otherwise specified)}

PARAMETER

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

TEST CONDITIONS

Ic= 50μA

MIN TYP MAX UNIT

100

μA

Ic= 1mA

IE=50μA

VCB=80V, IE=0A

VEB=4V , IC=0A

VCE=3V,Ic= 0.5A

IEBO

hFE

DC Current Transfer Ratio

Collector-Emitter Saturation Voltage

Transition Frequency

390

0.4

VCE(sat) Ic=500mA,IB= 20mA

0.15

100

MHz

VCE= 10V, IE= -50 mA, f=100MHz

Output Capacitance

Cob

VCB= 10V, IE= 0 A, f=1MHz

CLASSIFICATION OF hFE

RANK

RANGE

82-180

120-270

180-390

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R208-030,A

12 3

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