5秒后页面跳转
2SD1898T100/QR PDF预览

2SD1898T100/QR

更新时间: 2024-02-14 11:18:23
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 112K
描述
Small Signal Bipolar Transistor, 1-Element, Silicon

2SD1898T100/QR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SC-62
包装说明:ROHS COMPLIANT, MPT3, SC-62, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:7.2
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):180
JESD-30 代码:R-PSSO-F3JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN COPPER
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2SD1898T100/QR 数据手册

 浏览型号2SD1898T100/QR的Datasheet PDF文件第2页浏览型号2SD1898T100/QR的Datasheet PDF文件第3页浏览型号2SD1898T100/QR的Datasheet PDF文件第4页 
Power Transistor (80V, 1A)  
2SD1898 / 2SD1733  
Features  
Dimensions (Unit : mm)  
1) High VCEO, VCEO=80V  
2) High IC, IC=1A (DC)  
3) Good hFE linearity  
2SD1898  
+0.2  
0.1  
4.5  
±0.1  
1.5  
1.6±0.1  
4) Low VCE (sat)  
5) Complements the 2SB1260 / 2SB1181  
(1) (2) (3)  
+0.1  
0.4  
0.05  
0.5±0.1  
3.0±0.2  
0.4±0.1  
1.5±0.1  
0.4±0.1  
1.5±0.1  
Structure  
(1) Base  
(2) Collector  
(3) Emitter  
Epitaxial planer type  
NPN silicon transistor  
ROHM : MPT3  
EIAJ : SC-62  
Abbreviated symbol : DF  
2SD1733  
+
0.2  
2.3  
6.5  
±
0.2  
0.1  
C0.5  
+
0.2  
5.1  
0.1  
0.5±  
0.1  
0.65  
0.2  
±0.1  
0.75  
0.9  
0.2 2.3±  
0.55  
±0.1  
2.3±  
1.0±0.2  
(1) (2) (3)  
ROHM : CPT3  
EIAJ : SC-63  
(1) Base  
(2) Collector  
(3) Emitter  
Absolute maximum ratings (Ta=25C)  
Limits  
120  
80  
5
Parameter  
Symbol  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
V
V
V
1
A (DC)  
Collector current  
I
C
2
A (Pulse)1  
0.5  
2
W
2SD1898  
W
W
2  
Collector power  
dissipation  
P
C
1
2SD1733  
10  
W (Tc=25°C)  
Junction temperature  
Tj  
150  
°C  
°C  
Storage temperature  
Tstg  
55 to +150  
1 Pw=20ms, duty=1 / 2  
2 When mounted on a 40×40×0.7mm ceramic board.  
www.rohm.com  
2012.01 - Rev.E  
1/3  
c
2012 ROHM Co., Ltd. All rights reserved.  

与2SD1898T100/QR相关器件

型号 品牌 获取价格 描述 数据表
2SD1898T100/R ROHM

获取价格

1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, MPT3, SC-62, 3 PIN
2SD1898T100P ROHM

获取价格

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, SC-
2SD1898T100Q RENESAS

获取价格

Sample Program (Remote Control Transmission/Reception)
2SD1898T100R ROHM

获取价格

Power Transistor (80V, 1A)
2SD1898T101 ROHM

获取价格

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1898T101/PQ ROHM

获取价格

Small Signal Bipolar Transistor, 1-Element, Silicon,
2SD1898T101/PR ROHM

获取价格

Small Signal Bipolar Transistor, 1-Element, Silicon,
2SD1898T101/Q ROHM

获取价格

Si, SMALL SIGNAL TRANSISTOR
2SD1898T101/QR ROHM

获取价格

Small Signal Bipolar Transistor, 1-Element, Silicon,
2SD1898T101/R ROHM

获取价格

Si, SMALL SIGNAL TRANSISTOR