M C C
TM
Micro Commercial Components
2SD1899-M
2SD1899-L
2SD1899-K
Micro Commercial Components
20736 Marilla Street Chatsworth
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4933
Features
·
•
Halogen free available upon request by adding suffix "-HF"
Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS
Compliant. See ordering information)
NPN Silicon
Epitaxial Transistor
•
•
•
•
Capable of 1.0Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 60V
o
o
Operating and storage junction temperature range:-55 C to +150 C
x
·
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
DPAK
J
H
1
2
3
C
I
Electrical Characteristics @ 25OC Unless Otherwise Specified
O
Symbol
Parameter
Min
Max
Units
F
4
E
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
60
60
7
Vdc
Vdc
(I =1.0mAdc, IB=0)
C
M
Collector-Base Breakdown Voltage
V
K
(I =100µAdc, IE=0)
C
Emitter-Base Breakdown Voltage
(IE=100µAdc,IC=0)
Collector Cutoff Current
(VCB=60Vdc, IE=0Adc)
Vdc
10
10
µAdc
µAdc
G
IEBO
Emitter Cutoff Current
(VEB=7.0Vdc, IC=0Adc)
Q
ON CHARACTERISTICS
hFE(1)
DC Current Gain*
(IC=600mAdc, VCE=2.0Vdc)
A
100
400
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
L
D
(I =1500mAdc, IB=150mAdc)
0.25
1.2
Vdc
Vdc
B
C
PIN 1. BASE
PIN 2.4 COLLECTOR
PIN 3. EMITTER
Base-Emitter Saturation Voltage
(I =1500mAdc, IB=150mAdc)
C
DIMENSIONS
SMALL-SIGNAL CHARACTERISTICS
INCHES
MAX
MM
Transistor Frequency
(I =1500mAdc, VCE=5Vdc)
C
fT
DIM
A
B
C
D
E
MIN
MIN
MAX
2.40
0.13
0.86
0.58
6.70
5.46
NOTE
120(Typ)
30(typ)
MHz
pF
0.087
0.000
0.026
0.018
0.256
0.201
0.094
0.005
0.034
0.023
0.264
0.215
2.20
0.00
0.66
0.46
6.50
5.10
COB
Collector Output Capacitance
(VCB=10Vdc, IE=0,f=1MHz)
F
G
H
I
J
K
L
0.190
0.114
4.83
2.90
0.236
0.086
0.386
0.244
0.094
0.409
6.00
2.18
9.80
6.20
2.39
10.40
CLASSIFICATION OF HFE (1)
0.055
0.067
1.40
1.70
Rank
M
L
K
M
0.063
1.60
1.10
0.00
5.35
O
0.043
0.051
1.30
Range
100-200
160-320
200-400
Q
V
0.000
0.012
0.30
0.211
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Revision: A
2015/03/24