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2SD1899-L PDF预览

2SD1899-L

更新时间: 2024-11-25 01:11:55
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 661K
描述
NPN Silicon Epitaxial Transistor

2SD1899-L 数据手册

 浏览型号2SD1899-L的Datasheet PDF文件第2页浏览型号2SD1899-L的Datasheet PDF文件第3页 
M C C  
TM  
Micro Commercial Components  
2SD1899-M  
2SD1899-L  
2SD1899-K  
Micro Commercial Components  
20736 Marilla Street Chatsworth  
CA 91311  
Phone: (818) 701-4933  
Fax: (818) 701-4933  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS  
Compliant. See ordering information)  
NPN Silicon  
Epitaxial Transistor  
Capable of 1.0Watts of Power Dissipation.  
Collector-current 3.0A  
Collector-base Voltage 60V  
o
o
Operating and storage junction temperature range:-55 C to +150 C  
x
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
DPAK  
J
H
1
2
3
C
I
Electrical Characteristics @ 25OC Unless Otherwise Specified  
O
Symbol  
Parameter  
Min  
Max  
Units  
F
4
E
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
60  
60  
7
Vdc  
Vdc  
(I =1.0mAdc, IB=0)  
C
M
Collector-Base Breakdown Voltage  
V
K
(I =100µAdc, IE=0)  
C
Emitter-Base Breakdown Voltage  
(IE=100µAdc,IC=0)  
Collector Cutoff Current  
(VCB=60Vdc, IE=0Adc)  
Vdc  
10  
10  
µAdc  
µAdc  
G
IEBO  
Emitter Cutoff Current  
(VEB=7.0Vdc, IC=0Adc)  
Q
ON CHARACTERISTICS  
hFE(1)  
DC Current Gain*  
(IC=600mAdc, VCE=2.0Vdc)  
A
100  
400  
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
L
D
(I =1500mAdc, IB=150mAdc)  
0.25  
1.2  
Vdc  
Vdc  
B
C
PIN 1. BASE  
PIN 2.4 COLLECTOR  
PIN 3. EMITTER  
Base-Emitter Saturation Voltage  
(I =1500mAdc, IB=150mAdc)  
C
DIMENSIONS  
SMALL-SIGNAL CHARACTERISTICS  
INCHES  
MAX  
MM  
Transistor Frequency  
(I =1500mAdc, VCE=5Vdc)  
C
fT  
DIM  
A
B
C
D
E
MIN  
MIN  
MAX  
2.40  
0.13  
0.86  
0.58  
6.70  
5.46  
NOTE  
120(Typ)  
30(typ)  
MHz  
pF  
0.087  
0.000  
0.026  
0.018  
0.256  
0.201  
0.094  
0.005  
0.034  
0.023  
0.264  
0.215  
2.20  
0.00  
0.66  
0.46  
6.50  
5.10  
COB  
Collector Output Capacitance  
(VCB=10Vdc, IE=0,f=1MHz)  
F
G
H
I
J
K
L
0.190  
0.114  
4.83  
2.90  
0.236  
0.086  
0.386  
0.244  
0.094  
0.409  
6.00  
2.18  
9.80  
6.20  
2.39  
10.40  
CLASSIFICATION OF HFE (1)  
0.055  
0.067  
1.40  
1.70  
Rank  
M
L
K
M
0.063  
1.60  
1.10  
0.00  
5.35  
O
0.043  
0.051  
1.30  
Range  
100-200  
160-320  
200-400  
Q
V
0.000  
0.012  
0.30  
0.211  
www.mccsemi.com  
1 of 3  
Revision: A  
2015/03/24  

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