Datasheet > 2SD1899-ZK(TO-251)

2SD1899-ZK(TO-251)

更新时间： 2023-01-03 09:57:28

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	736K
描述
Transistor

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2SD1899-ZK(TO-251) 数据手册

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251 Plastic-Encapsulate Transistors

2SD1899-Z TRANSISTOR (NPN)

TO-251

FEATURES

High h_FEh_FE=100 to 400

Low V_CE(sat)V_CE(sat)=0.25V

1.BASE

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

2.COLLECTOR

3.EMITTER

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

℃

T_J

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=100μA,I_C=0

I_CBO

I_EBO

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE(sat)

f_T

V_CB=60V,I_E=0

μA

Emitter cut-off current

V_EB=7V,I_C=0

V_CE=2V,I_C=200mA

V_CE=2V,I_C=600mA

V_CE=2V,I_C=2A

100

DC current gain

400

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=1.5A,I_B=150mA

V_CE=5V,I_C=1.5A

V_CB=10V,I_E=0,f=1MHz

0.25

1.2

120

MHz

Collector output capacitance

Turn on Time

C_ob

t_on

0.5

2.0

0.5

Switching Time

t_stg

V_CC=10V,I_C=1A,I_B1=-I_B2=-0.1A

μs

Storage Time

Fall Time

t_f

CLASSIFICATION OF h_FE(2)

Rank

100-200

160-320

200-400

Range

12 3

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