Datasheet > 2SD1899(TO-252)

2SD1899(TO-252)

更新时间： 2024-04-09 19:01:40

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	430K
描述
60V,3A,Medium Power NPN Bipolar Transistor

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2SD1899(TO-252) 数据手册

Product Specification

NPN Epitaxial Planar Silicon Transistors

2SD1899

FEATURES



High h_FE: h_FE=100 to 400



Low V_CE(sat): V_CE(sat)≤0.3V

TO-252

Ordering Information

Part Number

Package

Shipping

Marking Code

2SD1899

TO-252

80 pcs / Tube or 2500 pcs / Tape & Reel

D1899

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Volage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

Peak Collector Current

Base current

I_CM

I_B

0.5

Power Dissipation

P_D

R_θJA

R_θJC

R_θJL

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Junction and Storage temperature range

°C/W

T_J,T_STG

-55 to +150

℃

Note 1: The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

STM0282A: June 2023 [1.0]

www.gmesemi.com

12 3 4

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