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2SD1898-Q PDF预览

2SD1898-Q

更新时间: 2024-11-24 07:31:35
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 210K
描述
NPN Silicon Power Transistors

2SD1898-Q 数据手册

 浏览型号2SD1898-Q的Datasheet PDF文件第2页 
M C C  
2SD1898-P  
2SD1898-Q  
2SD1898-R  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
High VCEO, VCEO=80V  
High IC, IC=1.0A(DC)  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
NPN Silicon  
Power Transistors  
·
·
Maximum Ratings  
SOT-89  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current, DC  
Value  
100  
80  
5.0  
1.0  
2.0  
0.5  
2.0  
-55 to +150  
-55 to +150  
Unit  
V
V
A
B
V
K
A
(1)  
Pulse  
Collector Power Dissipation(2)  
PC  
W
E
TJ  
TSTG  
Junction Temperature  
Storage Temperature  
OC  
OC  
C
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
G
H
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
J
F
OFF CHARACTERISTICS  
VCEO  
VCBO  
VEBO  
Collector-Emitter Breakdown Voltage  
80  
100  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =1.0mAdc)  
C
Collector-Base Breakdow n Voltage  
(I =50uAdc)  
C
1. OUT  
2. GND  
3. IN  
Emitter-Base Breakdown Voltage  
---  
---  
Vdc  
1
2
3
(I =50uAdc)  
E
I
Collector Cutoff Current  
(VCB=80Vdc)  
---  
1.0  
1.0  
390  
0.4  
---  
uAdc  
uAdc  
---  
CBO  
I
Emitter Cutoff Current  
---  
---  
EBO  
(VEB=4.0Vdc, I =0)  
C
hFE  
DC Current Transfer Ratio(3)  
82  
---  
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ  
(VCE=3.0Vdc, I =0.5Adc)  
ꢈꢀꢇꢆ  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢇꢆ  
ꢁꢋꢌꢄꢅꢆ  
C
ꢇꢀꢁꢆ  
ꢍꢎꢏꢐꢆ  
ꢇꢉꢊꢆ  
ꢇꢀꢁꢆ  
ꢒꢍꢐꢓꢆ  
1.55  
ꢇꢉꢊꢆ  
ꢒꢍꢔꢕꢆ  
ꢇꢇꢇꢇꢇ  
VCE(sat)  
fT  
Collector-Emitter Saturation Voltage  
---  
0.15  
100  
Vdc  
MHz  
ꢉꢆ  
ꢍꢎꢑꢎꢆ  
(I /IB=500mA/20mA)  
C
.061  
ꢇꢇꢇꢇꢇ  
REF.  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ꢙꢆ  
ꢝꢆ  
ꢃꢆ  
ꢞꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢒꢍ25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
Transition Frequency  
---  
(VCE=10Vdc, I =50mAdc,  
E
f=100MHz)  
ꢌꢛꢜꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
C
ob  
Output Capacitance  
---  
20  
---  
pF  
(VCB=10Vdc, I =0, f=1.0MHz)  
E
 ꢆ  
(1) Pw=20ms, duty=1/2  
(2) When mounted on a 40x40x0.7mm ceramic board.  
(3) Measured using pulse current  
CLASSIFICATION OF hFE  
Rank  
Range  
Marking  
P
Q
R
82-180  
120-270  
180-390  
DF  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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