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2SD1898D PDF预览

2SD1898D

更新时间: 2024-11-25 17:00:43
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 194K
描述
80V,1A,Medium Power NPN Bipolar Transistor

2SD1898D 数据手册

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Product specification  
Power Transistor(80V,1A)  
2SD1898  
FEATURES  
Pb  
Lead-free  
High VCEO,VCEO=80V.  
High IC,IC=1A(DC).  
Good HFE Linearity.  
Low VCE(sat).  
Complement the 2SB1260.  
APPLICATIONS  
NPN silicon transistor.  
2SD1898I  
TO-251  
2SD1898D  
TO-252  
Ordering Information  
Part Number  
Package  
Shipping  
Marking Code  
2SD1898I  
TO-251  
80/Tube  
80/Tube or2500/Tape Reel  
D1898I  
2SD1898D□  
TO-252  
D1898D  
: none is for Lead Free package;  
“G” is for Halogen Free package.  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
120  
80  
Units  
Collector-Base Voltage  
V
V
V
A
Collector-Emitter Voltage  
Emitter-Base Voltage  
5
Collector Current -Continuous  
Collector Current -pulse  
Collector Dissipation  
1
ICM  
2
A
1.0  
W
PC  
1.3 Note1  
W
Junction and Storage Temperature  
Tj,Tstg  
-55 to +150  
Note1:Mounted on ceramic substrate(250mm2*0.8t)  
STM0256A  
www.gmesemi.com  
1

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