Datasheet > 2SD1766

2SD1766

更新时间： 2024-11-20 07:31:31

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	36K
描述
Medium Power Transistor

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中文翻译

获取价格

数据手册

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2SD1766 数据手册

SMD Type

Transistors

Medium Power Transistor

2SD1766

SOT-89

Unit: mm

+0.1

-0.1

+0.1

1.50

-0.1

4.50

1.80

+0.1

-0.1

Features

+0.1

0.48

-0.1

+0.1

0.53

-0.1

+0.1

0.44

-0.1

Low VCE(sat), VCE(sat) = 0.5V (typical)

(I^C= 2A, IB = 0.2A).

1. Base

+0.1

-0.1

3.00

2. Collector

3. Emiitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

Rating

Unit

V^CEO

V^EBO

Collector current

I^C

I^C(Pulse) *¹

2.5

Collector power dissipation

P^C

0.5

P^C

T^j

Junction temperature

Storage temperature

150

Tstg

-55 to +150

*1. Pw=20ms.

*2. 40 40 0.7mm Ceramic board.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

BV^CBOIC=50ìA

BV^CEOIC=1mA

BV^EBOIE=50ìA

Collector cutoff current

Emitter cutoff current

I^CBO

I^EBO

h^FE

VCB=20V

VEB=4V

ìA

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

VCE=3V,IC=0.5A

390

0.8

V^CE(sat)IC=2A,IB=0.2A

0.5

100

f^T

VCE=5V, IE= -500mA, f=100MHz

VCB=10V, IE=0A, f=1MHz

MHz

Output capacitance

C^ob

hFE Classification

Marking

Rank

h^FE

82 180

120 270

180 390

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